Applied Materials Inc Unveils Transistor and Wiring Innovations for Faster AI Chips

As the semiconductor industry transitions to Gate-All-Around (GAA) transistors, Applied Materials is at the forefront of a technological revolution that promises to deliver energy-efficient computing vital for the next generation of AI chips. With the ramp-up of 2nm-class GAA chips expected to enter volume production this year, the introduction of innovative materials is poised to facilitate the evolution of GAA transistors at angstrom nodes.

Dr. Prabu Raja, President of the Semiconductor Products Group at Applied Materials, emphasized the urgency of these innovations: “The rapid progress of AI is pushing compute performance to the limit, and breakthroughs in computing begin with the transistor.” He noted that the new systems would extend Applied’s leadership in transistor and wiring advancements, helping customers accelerate their chip roadmaps amidst the fast-paced AI landscape.

A key component of the new technology suite is the Applied Producer™ Viva™ radical treatment system, designed to enable precision engineering of GAA transistor nanosheets. These nanosheets, which are critical for efficient charge conduction, must have exceptionally well-defined physical features to optimize their performance. The Viva system achieves angstrom-level precision by utilizing a patented delivery architecture that generates ultra-pure radical species. This approach ensures a gentle, damage-free treatment environment, resulting in highly uniform surfaces that dramatically enhance electron mobility.

The Viva system is already being embraced by leading logic chip manufacturers for advanced channel engineering in 2nm processes and beyond. Additionally, when paired with the Applied Producer Pyra™ thermal annealing process, the Viva system further reduces resistance in conducting copper wires, extending the use of copper in advanced chip designs.

The Centris™ Sym3™ Z Magnum™ etch system, another significant innovation, is designed to meet the demanding requirements of GAA transistors by creating angstrom-level 3D trenches with enhanced plasma control. These trenches must have uniform depth, straight sidewalls, and flat bottoms to ensure optimal transistor performance. The Sym3 Z Magnum employs second-generation pulsed voltage technology (PVT2) that eliminates traditional trade-offs in ion directionality, enabling greater precision in etch processes.

With over 250 chambers already operational in the field, the Sym3 Z Magnum is set to revolutionize the etching process and drive performance enhancements across logic, DRAM, and high-bandwidth memory (HBM) technologies.

In addition to innovations in transistor architecture, Applied Materials is also addressing the challenges posed by contact resistance in AI chips. The new Centris™ Spectral™ Molybdenum ALD* system selectively deposits monocrystalline molybdenum, offering a critical reduction in contact resistance—by as much as 15 percent compared to traditional tungsten contacts. This advancement is crucial for maintaining chip performance as the dimensions of metal contacts shrink below 2nm.

The Spectral system features state-of-the-art quad reactor design and a broad range of processing capabilities, ensuring that leading logic chipmakers can efficiently produce the advanced films necessary for next-generation AI chips.

With these latest innovations, Applied Materials reaffirms its commitment to leading the semiconductor industry through advanced materials engineering. As the demand for AI computing continues to surge, the company's new systems are set to play a pivotal role in enhancing the performance and energy efficiency of next-generation chips.

Applied Materials continues to push the boundaries of science and engineering to deliver material innovations that will shape the future of technology. For more information about these new systems and their applications, a media kit is available on the Applied Materials website.

*ALD = Atomic Layer Deposition