Diodes Incorporated Launches Industry-Leading 100V PowerDI®8080-5 Packaged MOSFET for Automotive Applications
Innovative Technology Set to Enhance Efficiency in 48V Automotive Systems
On March 25, 2026, Diodes Incorporated (Nasdaq: DIOD) announced the expansion of its PowerDI8080-5 automotive-compliant N-channel MOSFET portfolio with the introduction of a groundbreaking ultra-low RDS(ON), 100V MOSFET. This new addition, alongside a series of 40V to 80V MOSFETs, is designed to address the growing demand for high-efficiency solutions in automotive applications, particularly in 48V systems used in battery electric vehicles (BEVs), hybrid electric vehicles (HEVs), and internal combustion engine (ICE) platforms.
1. Key Features and Benefits
The newly launched DMTH10H1M7SPGWQ, boasting a maximum RDS(ON) of just 1.5mΩ, is tailored for use in 48V brushless DC (BLDC) motor drives that power critical functions such as steering and braking systems. This innovative MOSFET is also suitable for high-power applications including battery disconnect switches and on-board chargers (OBC).
In addition to the 100V variant, Diodes has introduced several other models within the PowerDI8080-5 portfolio. The 80V-rated DMTH81M2SPGWQ and the 40V-rated DMTH4M40SPGWQ, which features an impressive maximum RDS(ON) of 0.4mΩ, are specifically designed for 12V BLDC motors and DC-DC applications. For low-voltage, microcontroller-driven automotive applications, the 40V-rated logic MOSFET DMTH4M40LPGWQ offers a competitive RDS(ON) of 0.64mΩ at a gate-source voltage (VGS) of 4.5V.
The 60V-rated DMTH6M70SPGWQ further enhances the lineup with performance capabilities for 24V applications, solidifying Diodes' commitment to providing versatile solutions for the automotive sector.
2. Compact and Efficient Design
The PowerDI8080-5 package, with a compact PCB footprint of just 64mm², occupies approximately 40% less area than the legacy TO-263 (D2PAK) package, making it a perfect fit for space-constrained applications. The off-board profile of 1.7mm enhances its suitability for modern automotive design needs.
One of the standout features of the PowerDI8080-5 package is its copper clip die bonding technology, which minimizes thermal resistance (RthJC) to as low as 0.3°C/W. This allows the devices to sustain drain currents of up to 847A without risking damage, ensuring reliability and performance under demanding conditions. The gullwing lead configuration not only facilitates automated optical inspection (AOI) but also enhances temperature cycling reliability, which is vital for automotive manufacturing processes.
3. Pricing and Availability
The PowerDI8080-5 N-channel MOSFETs are available at competitive pricing for orders of 5,000 pieces. The pricing structure is as follows:
- DMTH10H1M7SPGWQ: $1.71
- DMTH81M2SPGWQ: $1.89
- DMTH4M40SPGWQ: $1.65
- DMTH4M40LPGWQ: $1.65
- DMTH6M70SPGWQ: $1.82
- DMTH4M72SPGWQ: $1.11
In addition to these automotive-compliant versions, standard-compliance variants are also available for industrial and commercial applications.
4. Conclusion: A Step Forward for Automotive Efficiency
With the introduction of the PowerDI8080-5 MOSFETs, Diodes Incorporated solidifies its position as a leader in the semiconductor industry, particularly in the automotive sector. These innovative devices not only cater to the growing demand for efficient power management solutions but also pave the way for advancements in electric and hybrid vehicle technologies. As the automotive landscape continues to evolve, Diodes remains committed to delivering high-quality, high-efficiency semiconductor products that meet the needs of the market.
